Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yi Ying Liao0
Chih Chieh Yeh0
Wen Jer Tsai0
Date of Patent
January 6, 2009
0Patent Application Number
118656160
Date Filed
October 1, 2007
0Patent Primary Examiner
Patent abstract
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.
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