Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 6, 2009
Patent Application Number
11177281
Date Filed
July 11, 2005
Patent Primary Examiner
Patent abstract
A semiconductor device comprises a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode and made of a perovskite type ferroelectrics containing Pb, Zr, Ti and O, the dielectric film comprising a first portion formed of a plurality of crystal grains partitioned by grain boundaries having a plurality of directions.
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