US Patent 7466613 Sense amplifier for flash memory device

A sense amplifier circuit comprises first and second cross-coupled inverters to produce a latch with first and second power supply nodes. The first latch power supply node couples a first power supply potential to the latch when the sense amplifier is operating in a read-out mode. The second latch power supply node couples a second power supply potential to the latch when the sense amplifier operates in the read-out mode. The first and second latch power supply nodes are further configured to couple an equalization potential to the first and second power supply nodes when the latch is operating in an equalization mode.