Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 16, 2008
Patent Application Number
11772417
Date Filed
July 2, 2007
Patent Primary Examiner
Patent abstract
A nonvolatile memory element includes a laminated gate provided above a semiconductor substrate with a tunnel insulating film disposed therebetween and having a floating gate electrode, a gate-gate insulating film and a control gate electrode sequentially stacked. The gate-gate insulating film includes a first silicon oxide film, a first aluminum oxide film having hafnium added thereto, a second aluminum oxide film, a third aluminum oxide film having hafnium added thereto and a second silicon oxide film sequentially stacked.
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