US Patent 7465955 Thin-film transistor and method of fabricating same

A thin film transistor of the present invention is a thin film transistor (100) having a semiconductor layer (14), a source region (15) and a drain region (16) provided to be isolated from each other so as to mutually oppose the semiconductor layer. The semiconductor layer has π-conjugated organic semiconductor molecules as its main component. The π-conjugated organic semiconductor molecules are oriented so that π orbitals substantially oppose each other and that the molecular axis of the main chains is oriented to be inclined with respect to a direction of electric field in a channel formed in the semiconductor layer.