Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Toshitake Yaegashi0
Date of Patent
November 4, 2008
0Patent Application Number
115147050
Date Filed
August 30, 2006
0Patent Primary Examiner
Patent abstract
A semiconductor memory device includes a first select transistor, first stepped portion, and a first contact plug. The first select transistor is formed on a side of an upper surface of a substrate and has a first multi-layer gate. The first-stepped portion is formed by etching the substrate adjacent to the first multi-layer gate of the first select transistor such that the first stepped portion forms a cavity in the upper surface of the substrate. The first contact plug is formed in the first stepped portion.
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