US Patent 7442992 Bonded SOI substrate, and method for manufacturing the same

Patent 7442992 was granted and assigned to SUMCO on October, 2008 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Current Assignee

SUMCO

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7442992

Date of Patent

October 28, 2008

Patent Application Number

11131332

Date Filed

May 18, 2005

Patent Primary Examiner

‌

Edward Wojciechowicz

Patent abstract

This bonded SOI substrate includes: an SOI layer having a low density impurity layer in which dopants are present at low density and a high density impurity layer in which dopants are present at high density; a wafer for a support substrate which supports said SOI layer; and a buried insulating film, wherein said SOI layer and said wafer for a support substrate are bonded with said buried insulating film therebetween, and gettering sites are formed in said high density impurity layer.