Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
October 28, 2008
Patent Application Number
11604915
Date Filed
November 28, 2006
Patent Primary Examiner
Patent abstract
Methods of fabricating structures, such as memory cell structures by exposing at least one edge portion of an intermediate nitride layer arranged between a polysilicon layer and a tungsten layer and performing an angled implant at the at least one edge portion to form a doped region through the at least one edge portion of the intermediate nitride layer is provided. The intermediate nitride layer may be formed by an anneal process, for example.
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