US Patent 7439194 Lanthanide doped TiOx dielectric films by plasma oxidation

Patent 7439194 was granted and assigned to Micron Technology on October, 2008 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Micron Technology

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

74391940

Patent Inventor Names

Leonard Forbes0

Kie Y. Ahn0

Date of Patent

October 21, 2008

Patent Application Number

110312890

Date Filed

January 7, 2005

Patent Primary Examiner

‌

Quoc D Hoang

Patent abstract

A dielectric film containing lanthanide doped TiOx and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric film is formed by evaporation of Ti, a lanthanide, and oxidation of the evaporated Ti/lanthanide film using an oxygen plasma.