US Patent 7432562 SRAM devices, and electronic systems comprising SRAM devices
Patent 7432562 was granted and assigned to Micron Technology on October, 2008 by the United States Patent and Trademark Office.
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The invention includes SRAM constructions comprising at least one transistor device having an active region extending into a crystalline layer comprising Si/Ge. A majority of the active region within the crystalline layer is within a single crystal of the crystalline layer, and in particular aspects an entirety of the active region within the crystalline layer is within a single crystal of the crystalline layer. The SRAM constructions can be formed in semiconductor on insulator assemblies, and such assemblies can be supported by a diverse range of substrates, including, for example, glass, semiconductor substrates, metal, insulative materials, and plastics. The invention also includes electronic systems comprising SRAM constructions.
US Patent 07432562 SRAM devices, and electronic systems comprising SRAM devices US Patent 7432562 SRAM devices, and electronic systems comprising SRAM devices
US Patent 07432562 SRAM devices, and electronic systems comprising SRAM devices
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