Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Noriaki Oda0
Yasutaka Nakashiba0
Hiroaki Ohkubo0
Date of Patent
October 7, 2008
0Patent Application Number
112317670
Date Filed
September 22, 2005
0Patent Primary Examiner
Patent abstract
A capacity element with a simple configuration exhibits excellent production reliability. A semiconductor device 100 includes a capacity element consisting of a lower electrode 102, an SiCN film 107 and an upper electrode 113. In an insulating film 101 on a semiconductor substrate is formed a groove, in which the lower electrode 102 is buried. The lower electrode 102 includes two regions, that is, a first lower electrode 103 and a second lower electrode 105, which are separated from each other via the insulating film 101.
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