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US Patent 7430137 Non-volatile memory cells in a field programmable gate array

Patent 7430137 was granted and assigned to Actel (company) on September, 2008 by the United States Patent and Trademark Office.

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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
7430137
Date of Patent
September 30, 2008
Patent Application Number
11868694
Date Filed
October 8, 2007
Patent Citations Received
‌
US Patent 11671099 Logic cell for programmable gate array
3
Patent Primary Examiner
‌
J. H. Hur
Patent abstract

A non-volatile memory cell comprises a first floating gate transistor having a source, a drain, and a gate electrically coupled to a row line. A second floating gate transistor has a source, a drain, and a gate electrically coupled to the row line. A first p-channel MOS transistor has a source, a drain, and a gate, the drain of the first p-channel MOS transistor electrically coupled to the drain of the first floating gate transistor forming a first common node. A second p-channel MOS transistor has a source, a drain, and a gate, the first drain of the second p-channel MOS transistor electrically coupled to the drain of the second floating gate transistor forming a second common node, the gate of the second p-channel MOS transistor electrically coupled to the first common node, and the second common node electrically coupled to the gate of the first p-channel MOS transistor.

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