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US Patent 7426135 Static random access memory cell using chalcogenide

Patent 7426135 was granted and assigned to Ovonyx on September, 2008 by the United States Patent and Trademark Office.

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Patent attributes

Current Assignee
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Ovonyx
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
74261350
Patent Inventor Names
Ward D. Parkinson0
Tyler A Lowrey0
Date of Patent
September 16, 2008
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Patent Application Number
111586190
Date Filed
June 22, 2005
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Patent Primary Examiner
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David Lam
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Patent abstract

A static random access memory may be formed using a bitline and a bitline bar coupled to ovonic threshold switches. The ovonic threshold switches may, in turn, be coupled to cross coupled NMOS transistors. In some embodiments, a very compact static random access memory may result.

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