Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hisashi Ohtani0
Date of Patent
August 19, 2008
0Patent Application Number
112547110
Date Filed
October 21, 2005
0Patent Primary Examiner
Patent abstract
A semiconductor integrated circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabricating such circuit will be provided. A gate insulating film of the TFT required to operate at high speed (e.g., TFT used for a logic circuit) is relatively thinned less than a gate insulating film of the TFT which is required to have high withstand voltage (e.g., TFT used for switching high voltage signals).
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