Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yen-Hao Shih0
Erh-Kun Lai0
Hang-Ting Lue0
Kuang Yeu Hsieh0
Chiahua Ho0
Date of Patent
August 19, 2008
0Patent Application Number
112030870
Date Filed
August 15, 2005
0Patent Primary Examiner
Patent abstract
A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main gate of the memory device. In operation, application of a voltage to the sub-gate forms a transient state inversion layer that serves as a bit-line, so that no implantation is required to form the bit-line.
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