Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yong Wook Shin0
Date of Patent
August 19, 2008
0Patent Application Number
111815770
Date Filed
July 13, 2005
0Patent Primary Examiner
Patent abstract
Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes a semiconductor substrate, in which active and inactive regions are separated by a field oxidation film; source/drain junctions contacting the field oxidation film and formed in the active regions of the semiconductor substrates; a buffer oxidation film formed at designated portions of the source/drain junctions, and a gate electrode formed on the semiconductor substrate adjacent to the buffer oxidation film; and a silicide film formed at designated portions of the source/drain junctions and the upper surface of the gate electrode.
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