Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sang Gi Lee0
Date of Patent
August 19, 2008
0Patent Application Number
113206800
Date Filed
December 30, 2005
0Patent Primary Examiner
Patent abstract
In a CMOS image sensor manufacturing process, heavily doped p type impurity ions (for example, B) are implanted in a dummy moat region when the heavily doped p type impurity ions is implanted in a PMOS transistor region, so that metal ion contamination is removed. Accordingly, a CMOS image sensor capable of reducing a leakage current by gettering metal ion contamination is provided.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
