Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Soo Jae Lee0
Date of Patent
August 12, 2008
0Patent Application Number
112690950
Date Filed
November 8, 2005
0Patent Primary Examiner
Patent abstract
Disclosed herein is a method for fabricating a capacitor of a semiconductor device. The method comprises the steps of forming an interlayer insulating film on a semiconductor substrate, forming contact plugs connected to the semiconductor substrate though the interlayer insulating film, forming a first storage node oxide film include a PSG film on the contact plugs, cleaning the semiconductor substrate on which the first storage node oxide film include a PSG film is formed, using isopropyl alcohol (IPA), to remove water-soluble compounds, and forming a second storage node oxide film on the first storage node oxide film.
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