Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
August 5, 2008
Patent Application Number
11052806
Date Filed
February 9, 2005
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for monitoring oxide film deposition is disclosed. The method utilizes monitor wafers having silicon nitride films thereon instead of bare wafers to monitor the growth of silicon oxide films in a furnace. The method for monitoring oxide film deposition includes the following steps. First of all, a monitor wafer having silicon nitride film and a process wafer are provided. Next an oxide layer is formed on the monitor wafer and the process wafer, and the thickness of the oxide layer is controlled substantially equally on the monitor wafer and the process wafer. Then the thickness of the oxide layer on the monitor wafer and the process wafer is measured.
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