US Patent 7405160 Method of making semiconductor device

Patent 7405160 was granted and assigned to Tokyo Electron on July, 2008 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Current Assignee

Tokyo Electron

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

74051600

Date of Patent

July 29, 2008

Patent Application Number

112996900

Date Filed

December 13, 2005

Patent Citations Received

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US Patent 11791201 Method for fabricating electrode and semiconductor device

Patent Primary Examiner

‌

Dung A. Le

Patent abstract

A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.