US Patent 7405151 Method for forming a semiconductor device
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Patent abstract
A method for forming a semiconductor device is described. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 Å. A copper layer is formed over the atomic layer deposited (ALD) TaN barrier to fill the opening.
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US Patent 07405151 Method for forming a semiconductor device US Patent 7405151 Method for forming a semiconductor device
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Patent Number
0740515100
Patent Number
740515100
Edits on 20 May, 2023
Golden AI
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Official Website
Edits on 26 Apr, 2023
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Infobox
Is a
Patent Jurisdiction
Patent Number
074051510
Date of Patent
July 29, 2008
0Patent Application Number
114209000
Date Filed
May 30, 2006
0Official Website
Patent Primary Examiner
Edits on 28 Sep, 2022
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
074051510
Date of Patent
July 29, 2008
0Patent Application Number
114209000
Date Filed
May 30, 2006
0Official Website
Patent Primary Examiner
Edits on 9 Jun, 2022
Golden AI
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Edits on 30 Nov, 2021
Golden AI
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US Patent 07405151 Method for forming a semiconductor device
Infobox
Is a
Patent jurisdiction
Patent number
07405151
Date of patent
July 29, 2008
Patent application number
11420900
Date Filed
May 30, 2006
Patent primary examiner
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