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US Patent 7403413 Multiple port resistive memory cell

Patent 7403413 was granted and assigned to Taiwan Semiconductor Manufacturing Company on July, 2008 by the United States Patent and Trademark Office.

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Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
74034130
Patent Inventor Names
Jhon Jhy Liaw0
Date of Patent
July 22, 2008
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Patent Application Number
114272530
Date Filed
June 28, 2006
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Patent Primary Examiner
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J. H. Hur
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Patent abstract

A resistive type memory system provides improved read access with multiple ports. The resistive type memory system includes a plurality of resistive type memory cells arranged in an array. Each of the resistive type memory cells has a corresponding first port and a corresponding second port. Each first port enables both read access and write access to the corresponding resistive type memory cell. Additionally, each second port enables read access to the corresponding MRAM cell. Furthermore, the memory system enables overlapping read or write access, with another read access.

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