Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 8, 2008
Patent Application Number
11139443
Date Filed
May 31, 2005
Patent Primary Examiner
Patent abstract
The present invention discloses improved method for manufacturing semiconductor device wherein the gate oxide films in the cell region, VPP peripheral circuit region and VDD peripheral circuit region are formed to have different thicknesses from one another so that the threshold voltage of the cell transistor may be increased to a desired value as well as increasing the operation speed of the transistor and suppress the short channel effect.
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