US Patent 7396769 Method for stripping photoresist from etched wafer

Patent 7396769 was granted and assigned to Lam Research on July, 2008 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Lam Research

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7396769

Date of Patent

July 8, 2008

Patent Application Number

10910059

Date Filed

August 2, 2004

Patent Primary Examiner

‌

Chuong A Luu

Patent abstract

A method of forming a feature in a low-k (k<3.0) dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A stripping gas comprising CO2 is provided. A plasma is formed from the stripping gas comprising CO2. The plasma from the stripping gas comprising CO2 is used to strip the patterned photoresist mask.