Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
June 24, 2008
Patent Application Number
11365313
Date Filed
March 1, 2006
Patent Primary Examiner
Patent abstract
A semiconductor device which includes a field effect transistor having a gate electrode on the upper side of a semiconductor substrate, with a gate insulation film therebetween, wherein at least the gate insulation film side of the gate electrode includes a film containing hafnium and silicon.
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