Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Bruce B. Doris0
Dureseti Chidambarrao0
Jack A. Mandelman0
MeiKei Ieong0
Date of Patent
June 17, 2008
0Patent Application Number
105364830
Date Filed
November 25, 2002
0Patent Primary Examiner
Patent abstract
A semiconductor device structure, includes a PMOS device 200 and an NMOS device 300 disposed on a substrate 1,2, the PMOS device including a compressive layer 6 stressing an active region of the PMOS device, the NMOS device including a tensile layer 9 stressing an active region of the NMOS device, wherein the compressive layer includes a first dielectric material, the tensile layer includes a second dielectric material, and the PMOS and NMOS devices are FinFET devices 200, 300.
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