Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wen Yuan Liu0
Jung-Chuan Chou0
Wen Bin Hong0
Date of Patent
June 17, 2008
0Patent Application Number
112556560
Date Filed
October 21, 2005
0Patent Primary Examiner
Patent abstract
A PbTiO3/SiO2-gated ISFET device comprising a PbTiO3 thin film as H+-sensing film, and a method of forming the same. The PbTiO3 thin film is formed through a sol-gel process which offers many advantages, such as, low processing temperature, easy control of the composition of the film and easy coating over a large substrate. The PbTiO3/SiO2 gated ISFET device of the present invention is highly sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.
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