US Patent 7382222 Monolithic inductor for an RF integrated circuit

An integrated high frequency inductor is disclosed that includes first and second conductor loops. The first conductor loop is fabricated in a conductive layer of a semiconductor substrate and having a first substantially constant width. The second conductor loop is fabricated in the conductive layer and within the boundary of the first conductor loop and having a second substantially constant width less than the first substantially constant width, and the outer perimeter of the second conductor loop separated from the inner perimeter of the first conductor loop by a substantially constant gap. A first conductor bridge connects a first end of the first conductor loop to a first end of the second conductor loop. A second conductor bridge is provided for connecting a fourth end of the first conductor loop to a second end of the second conductor loop, the first and second conductor bridges operable to form a single conductive loop between the first and second ends of the first conductor loop, the single conductive loop comprised of the first conductor loop, the second conductor loop, the first conductor bridge and the second conductor bridge.