US Patent 7381611 Multilayered phase change memory

Patent 7381611 was granted and assigned to Intel on June, 2008 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Intel

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

73816110

Date of Patent

June 3, 2008

Patent Application Number

106341300

Date Filed

August 4, 2003

Patent Primary Examiner

‌

Thao P. Le

Patent abstract

A phase change layer may switch between more and less conductive states in response to electrical stimulation. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and an insulating barrier. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and a thermal barrier.