Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
William R. Tonti0
Chih-Chao Yang0
Jack A. Mandelman0
Louis L. Hsu0
Date of Patent
June 3, 2008
0Patent Application Number
112908900
Date Filed
November 30, 2005
0Patent Primary Examiner
Patent abstract
A semiconductor structure including at least one e-fuse embedded within a trench that is located in a semiconductor substrate (bulk or semiconductor-on-insulator) is provided. In accordance with the present invention, the e-fuse is in electrical contact with a dopant region that is located within the semiconductor substrate. The present invention also provides a method of fabricating such a semiconductor structure in which the embedded e-fuse is formed substantially at the same time with the trench isolation regions.
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