Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tae-Jung Lee0
Dong-Ryul Chang0
Soo-Cheol Lee0
Date of Patent
May 27, 2008
0Patent Application Number
117053540
Date Filed
February 12, 2007
0Patent Primary Examiner
Patent abstract
A field effect transistor includes a gate that is formed in a channel region of an active region defined on a substrate. A source is formed at a first surface portion of the active region that is adjacently disposed at a first side face of the gate. A drain is formed at a second surface portion of the active region that is opposite to the first surface portion with respect to the gate. The drain has a protruded portion that is protruded from a surface portion of the substrate.
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