Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chih-Hung Shih0
Ta-Wen Liao0
Han-Tu Lin0
Feng-Yuan Gan0
Date of Patent
May 27, 2008
Patent Application Number
11467940
Date Filed
August 29, 2006
Patent Primary Examiner
Patent abstract
A method for fabricating a thin film transistor is provided. A conductive layer is formed on a substrate. A patterned mask is formed on the conductive layer to cover a predetermined thin film transistor (TFT) area, and at least one portion of the conductive layer exposed by the patterned mask are removed. A laser is applied to form a laser hole in the patterned mask to expose a portion of the conductive layer and the laser hole substantially corresponds to a channel region of the predetermined TFT area. The exposed conductive layer is etched to form source and drain electrodes on opposite sides of the channel region.
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