Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Po-Lun Cheng0
Date of Patent
May 13, 2008
0Patent Application Number
115312830
Date Filed
September 13, 2006
0Patent Primary Examiner
Patent abstract
A method for forming a carbon-containing silicon nitride layer with superior uniformity by low pressure chemical vapor deposition (LPCVD) using disilane, ammonia and at least one carbon-source precursor as reactant gases is provided.
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