US Patent 7355894 Programming flash memories

A flash memory device has an array of flash memory cells, a detector for detecting an external voltage applied to the flash memory device, and a command control circuit for controlling access to the array of flash memory cells. The command control circuit is adapted to perform a method of programming one or more of the flash memory cells when the external voltage exceeds a predetermined value and when the command control circuit receives a program command. The method includes, in response to the program command and the detected external voltage, applying an internally-generated programming voltage to a control gate of the one or more flash memory cells and applying a voltage pulse to a drain of the one or more flash memory cells while the control gate is at the internally-generated programming voltage.