Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Setsuo Nakajima0
Shunpei Yamazaki0
Ritsuko Kawasaki0
Date of Patent
April 1, 2008
0Patent Application Number
113884760
Date Filed
April 8, 2002
0Patent Primary Examiner
Patent abstract
To provide a technique required for purifying the interface between an active layer and an insulating film. On a substrate (101), a gate wiring (103) is formed and the surface thereof is covered with a gate oxide film (104). Then, a first insulating film (105a), a second insulating film (105b), a semiconductor film (106) and a protective film (107) are sequentially formed and layered without exposing them to the air. Further, the semiconductor film (106) is irradiated with laser light through the protective film (107). In this way, a TFT may be given good characteristics by completely purifying the interface of the semiconductor film.
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