Patent attributes
A method of fabricating MIS transistors starts with formation of gate electrode portions. Then, high-speed ions are irradiated through an insulating film to implant impurity ions into a semiconductor region by a self-aligning process, followed by total removal of the insulating film. The laminate is irradiated with laser light or other similar intense light to activate the doped semiconductor region. Another method of fabricating MIS transistors begins with formation of a gate-insulating film and gate electrode portions. Then, the gate-insulating film is removed, using the gate electrode portions as a mask. The semiconductor surface is exposed, or a thin insulating film is formed on this surface. High-speed ions are irradiated to perform a self-aligning ion implantation process. A further method of fabricating MIS transistors starts with formation of a gate-insulating film and gate electrode portions. Then, the gate-insulating film is etched by a self-aligning process, using the gate electrode portions as a mask, to thin the film. Subsequently, high-speed ions are irradiated to form doped regions in a semiconductor region by a self-aligning process.
