Patent attributes
A method is provided for performing photolithography on a substrate which has a first region on a lower level and a second region on an upper level, wherein a first pattern area exists within said first region, a second pattern area exists within said second region, and at least said first and second regions are coated with a photoresist, the method comprising: a) exposing the photoresist through a first mask so as to expose said first region including said first pattern area, and thus create a first pattern in said first pattern area, but not expose said second pattern area; and b) exposing the photoresist through a second mask so as to expose said second pattern area, and thus create a second pattern in said second pattern area, but not expose said first pattern area, and also to expose an area of said first region which lies adjacent said second region.
