Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tomotake Nashiki0
Hideo Sugawara0
Date of Patent
March 25, 2008
0Patent Application Number
111410090
Date Filed
June 1, 2005
0Patent Primary Examiner
Patent abstract
The present invention provides a transparent conductive film having: a transparent base film; a transparent SiOx thin film having a thickness of from 10 to 100 nm, a refractive index of from 1.40 to 1.80 and an average surface roughness Ra of from 0.8 to 3.0 nm, wherein x is from 1.0 to 2.0; and a transparent conductive thin film including an indium-tin complex oxide, which has a thickness of from 20 to 35 nm and a ratio of SnO2/(In2O3+SnO2) of from 3 to 15 wt %, wherein the transparent conductive thin film is disposed on one side of the transparent base film through the transparent SiOx thin film.
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