Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
March 25, 2008
Patent Application Number
11445786
Date Filed
June 2, 2006
Patent Primary Examiner
Patent abstract
A method and structure for forming a semiconductor structure. A semiconductor substrate is provided. A trench is formed within the semiconductor substrate. A first layer of electrically insulative material is formed within the trench. A first portion and a second portion of the first layer of electrically insulative material is removed. A second layer of electrically insulative material is selectively grown on the first layer comprising the removed first portion and the removed second portion.
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