Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Masaru Izumisawa0
Shigeo Kouzuki0
Kazuya Nakayama0
Satoshi Aida0
Date of Patent
March 11, 2008
0Patent Application Number
111868380
Date Filed
July 22, 2005
0Patent Primary Examiner
Patent abstract
A semiconductor device according to an embodiment of the present invention has a gate electrode which is formed on a semiconductor substrate via a gate insulating film, and which has a slit portion; side wall films formed at both side faces of the gate electrode and at side walls of the slit portion, and which fill an interior of the slit portion and cover the gate insulating film directly beneath the slit portion; and an interlayer insulating film formed to cover the gate electrode and the side wall films.
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