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US Patent 7341879 Method of manufacturing a point source light-emitting diode

Patent 7341879 was granted and assigned to Epistar on March, 2008 by the United States Patent and Trademark Office.

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Patent
Patent
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Patent attributes

Current Assignee
‌
Epistar
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
73418790
Patent Inventor Names
Jen-Chau Wu0
Tzu-Ying Yen0
Chung-Cheng Tu0
Han-Tsun Lai0
Date of Patent
March 11, 2008
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Patent Application Number
114818330
Date Filed
July 7, 2006
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Patent Primary Examiner
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Dung A. Le
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Patent abstract

A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a pattern including a light emitting area located on the light-emitting surface of the epitaxy structure. The first electrode is located on the substrate, and the isolation layer is located on the epitaxy structure adjacent to the first electrode. The contact layer is located on the first electrode, and the bonding layer is located on one portion of the isolation layer. The connection bridge with a width less than one half of the diameter of the light emitting area is located on the other portion of the isolation layer, thereby connecting the contact layer and the bonding layer.

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