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US Patent 7339815 Method of operating a programmable resistance memory array

Patent 7339815 was granted and assigned to Ovonyx on March, 2008 by the United States Patent and Trademark Office.

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Patent
Patent

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Current Assignee
‌
Ovonyx
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
7339815
Date of Patent
March 4, 2008
Patent Application Number
11524670
Date Filed
September 21, 2006
Patent Citations Received
‌
US Patent 11837276 Apparatuses and methods for 1T and 2T memory cell architectures
0
Patent Primary Examiner
‌
Leon Viet Q Nguyen
Patent abstract

A method of operating a programmable resistance memory array. The method comprises writing to all of the programmable resistance elements within the same row of the memory array at substantially the same time. The programmable resistance elements preferably include phase-change materials such as chalcogenides.

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