Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Mark Armstrong0
Thomas Hoffmann0
Christopher P. Auth0
M. Reaz Shaheed0
Date of Patent
March 4, 2008
Patent Application Number
11024259
Date Filed
December 27, 2004
Patent Primary Examiner
Patent abstract
An intentional recess or indentation is created in a region of semiconductor material that will become part of a channel of a metal oxide semiconductor (MOS) transistor structure. A layer is created on a surface of the recess to induce an appropriate type of stress in the channel.
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