Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shou-Gwo Wuu0
Tzu-Hsuan Hsu0
Dun-Nian Yaung0
Ho-Ching Chien0
Date of Patent
March 4, 2008
0Patent Application Number
112711160
Date Filed
November 10, 2005
0Patent Primary Examiner
Patent abstract
A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.
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