Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Venkat Selvamanickam0
Xuming Xiong0
Date of Patent
March 4, 2008
0Patent Application Number
108426190
Date Filed
May 10, 2004
0Patent Primary Examiner
Patent abstract
A method of forming a superconductive device is provided, including providing a substrate having a dimension ratio of not less than about 102, depositing a buffer film to overlie the substrate by ion beam assisted deposition utilizing and ion beam, monitoring spatial ion beam density of the ion beam over a target area, and depositing a superconductor layer to overlie the buffer film. Monitoring may be carried out by utilizing an ion detector having an acceptance angle of not less than 10°.
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