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US Patent 7338610 Etching method for manufacturing semiconductor device

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Is a
Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
73386100
Patent Inventor Names
In-Seak Hwang0
Byoung-Moon Yoon0
Won-Jun Lee0
Yong-Sun Ko0
Date of Patent
March 4, 2008
0
Patent Application Number
107633560
Date Filed
January 23, 2004
0
Patent Primary Examiner
‌
Anita K Alanko
0
Patent abstract

A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is removed or reduced to prevent any bubbles included in the chemical solution from adhering to the electrode. Thus, the chemical solution can etch the dielectric layers without being blocked by any bubbles included in a chemical solution.

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