US Patent 7335959 Device with stepped source/drain region profile

Patent 7335959 was granted and assigned to Intel on February, 2008 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Intel

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

73359590

Date of Patent

February 26, 2008

Patent Application Number

110318430

Date Filed

January 6, 2005

Patent Primary Examiner

‌

Fernando L Toledo

Patent abstract

Embodiments of the invention provide a transistor with stepped source and drain regions. The stepped regions may provide significant strain in a channel region while minimizing current leakage. The stepped regions may be formed by forming two recesses in a substrate to result in a stepped recess, and forming the source/drain regions in the recesses.