Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Li-Wei Cheng0
Po-Lun Cheng0
Date of Patent
February 26, 2008
0Patent Application Number
113070430
Date Filed
January 20, 2006
0Patent Primary Examiner
Patent abstract
A method of forming a gate dielectric is described. A plasma treatment process is performed to form a dielectric structure on a substrate, wherein the dielectric structure having a graded dielectric constant value that decreases gradually in a direction toward the substrate.
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