US Patent 7332779 Memory with split gate devices and method of fabrication

Patent 7332779 was granted and assigned to Intel on February, 2008 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Intel

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

73327790

Patent Inventor Names

Peter L. D. Chang0

Date of Patent

February 19, 2008

Patent Application Number

113502300

Date Filed

February 7, 2006

Patent Primary Examiner

‌

Tu-Tu Ho

Patent abstract

A DRAM fabricated on an SOI substrate employing single body devices as memory cells without relying on a field through the insulative layer of the SOI is described. Floating body devices are defined by orthogonally disposed lines with both a front gate and back gate for each body being formed on the insulative layer.