Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tsuyoshi Tanaka0
Hidetoshi Ishida0
Manabu Yanagihara0
Takashi Uno0
Date of Patent
February 19, 2008
0Patent Application Number
110228140
Date Filed
December 28, 2004
0Patent Primary Examiner
Patent abstract
In the semiconductor switch of the present invention, the gate electrode, source electrode and drain electrode are formed such that the distance between the gate and the drain of an MESFET, assuming a shunt FET, is longer than the distance between the gate and the drain of an MESFET, assuming a through FET, so that the gate breakdown voltage of the MESFET, assuming a shunt FET, is increased without changing the gate breakdown voltage of the MESFET, assuming a through FET.
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